| For the past 15 years single crystal sapphire has been at the cutting edge of semiconductor technology. A combination of unique chemical, physical, optical and mechanical properties make sapphire the best choice for a broad spectrum of laboratory and industrial applications. |
| • Chemical resistance. Sapphire is highly inert and resistant to attack in most process environments including hydrofluoric acid and the fluorine plasma applications commonly found in semiconductor wafer processing (NF3, CF4). • Mechanical properties. Sapphire is characterized by high toughness and solidity, and demonstrates excellent resistance in different environments ranging from cryogenic to over 1500°C. Due to this characteristics combined with chemical stability sapphire is widely used in medicine: endoscope and probe lenses, needles for thermal treatment of tumors, scalpels etc. • Electrical properties. Sapphire provides a high, stable dielectric constant with the electrical insulation required for LED, RF and microwave applications. • Optical transmission. Sapphire is characterized by high transmission in the range of UV to near IR. Given the chemical stability, high temperature and high pressure resistance sapphire is the preferred choice for window / viewport applications in high performance vacuum systems, furnaces, deep sea cameras, fire alarm systems etc. • Surface properties. Sapphire can be polished to very high flatness and smoothness for substrate applications and precision mechanical components. • Thermal properties. With a melting point over 2000°C, and high thermal conductivity sapphire is often used in many harsh process environments. • Wear properties. With high hardness and transparency, sapphire is used for scratch proof windows in high wear applications and for precision mechanical components. |
Basic properties |
| Crystallline structureHexagonala = b = 4.77 Åc = 13.04Melting point:2040°СThermal expansion index:6,7 х 10-6 С parallel to С-axisConductivity46.06 W/m °K at 0°CSpecific resistivity:5,0 х 10-6 С perpendicular to С-axisDielectric Constantaverage 11.5 (parallel to C-axis)Density3,98 g/ cm3Compressive Strength2 GPaYoung Modulus3.6x104 – 4.4x104Flexural Strength35-39 daN/ mm2Tensile Strength~400 MPa (at approx. 25°C)Poisson’s Ratio0.28-0.33Hardness9 mohs1800 Knoop parallel to c-axis2200 Knoop perpendicular to c-axisRefraction IndexNo: 1.768 (c-axis)Ne: 1.760 (c-axis)Birefringence(No-Ne) 0.008 |
Sapphire Transmission |
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Products |
Sapphire ingots for LED, RF and optical applications |
| Diameter/Width5-220 mmThickness/Length25 – 500 mmOrientationC (0001), M (1010), A (1120), R (1102)Surface qualityAs-cut, fine-groundEnds/Edge QualityAs-cut, fine-ground |
Sapphire tubes, capillaries and nozzles for mechanical and optical applications: laboratory equipment, semiconductor equipment, optical systems (CVD, plazma reactors, UV treatment of substances, protective sheaths for thermocouples etc.) |
| Inner Diameter0.6 - 30 mmOuter Diameter2 - 50 mmLengthUp to 600 mmOrientationRandom, CSurface qualityAs-grown, fine-ground, 80/50 per MIL-0-13830Ends/Edge QualityAs-cut |
Sapphire substrates for LED and RF applications |
| Diameter50.8 – 160mmThickness0.3 – 5 mmOrientationC (0001), M (1010), A (1120), R (1102)Surface qualityEPI-polished (Ra<0.5 nm) suitable for epitaxial growth |
Sapphire windows and viewports for UV, visible and near-IR applications (semiconductor equipment, scanners, laser systems, fire alarm systems, deep sea cameras) |
| Diameter1-240 mmThickness>/=0.15 mmOrientationRandom, M (1010), A (1120), R (1102), C (0001)Flatness4 λ per inchParallelism<0.5 - 3 angular minutesChamfer< /=0.1 - 0.5 mm x 45+/-5 degSurface quality80/50, 60/40, 40/20, 20/10. or 10/5 per MIL-0-13830 |
Sapphire rods and blanks for LED, RF, optical, mechanical and medical applications |
| Diameter1-300 mmThickness>/=0.15 mmOrientationC (0001), M (1010), A (1120), R (1102)Surface qualityAs-cut, fine-ground |
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