Laser Diode Discrete ModeEP2000-DM-B Series
The EP2000-DM-B laser diode module is a cost effective, highly coherent laser source. The patented discrete mode (DFB-like) ridge waveguide technology and epistructure design is used to deliver an InP-based strained quantum-well laser diode source emitting at a wavelength of 2.0µm with high SMSR. The Discrete Mode laser diode chip is packaged in an industry standard, hermetically sealed 14 pin butterfly package with integrated optical isolator, thermo-electric cooler (TEC), monitor photodiode and thermistor.
Key Features | Applications |
Excellent reliability | High performance gas sensing |
Mode-Hop free tuning >2nm | Seed Laser |
Integrated optical isolator |
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Narrow linewidth <2MHz |
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Optical and electrical characteristics: (T = 25°C)
PARAMETER | SYMBOL | MIN | TYP | MAX | UNIT |
LASER DIODE |
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Output Power in Fibre | Pf | 1.5 | 1.75 | 2 | mW |
Centre Wavelength | λcen | 1950 | 2001 | 2150 | nm |
Threshold Current | Ith | - | 20 | 40 | mA |
Operating Current | Iop | - | 70 | 120 | mA |
Forward Voltage | Vf | - | 1.3 | 1.6 | V |
Side Mode Suppression Ratio | SMSR | 30 | 40 | - | dB |
Temperature Tuning Coefficient |
| - | 0.1 | - | nm/K |
Current Tuning Coefficient |
| - | 0.01 | - | nm/mA |
Quantum Efficiency | η | 0.02 | 0.03 | - | mW/mA |
Optical Isolation | ISO |
| 40 | - | dB |
MONITOR DIODE* |
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Monitor Photo Current | Im | 0.2 | 0.4 | 0.8 | mA |
Monitor Operating Voltage | Vm | - | - | 5.5 | V |
Monitor Dark Current (at 5V VDR) | Imd | - | - | < 0.2 | µA |
Absolute Maximum Ratings (Tsub= 25°C)
Parameter | Symbol | Ratings | Units |
Laser diode reverse voltage | VR | 2 | V |
Laser diode forward current | IF | 120 | mA |
Photodiode reverse voltage | VDR | 20 | V |
Peltier current | IP | 1.2 | A |
Operating case temperature | Tcase | -20 to 65 | °C |
Storage temperature | Tstg | -40 to 85 | °C
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上海屹持光电技术有限公司
地址：上海市闵行区剑川路955号707室
Tel：15618996225 021-62209657 021-54843093
Fax：021-54843093
Email：sales@eachwave.com
Web：www.eachwave.com